AOTF12T50P 500v,12a n-channel mosfet general description product summary v ds @ t j,max 600v i dm 48a r ds(on),max < 0.5? q g,typ 22nc e oss @ 400v 4 j applications 100% uis tested 100% r g tested orderable part number form minimum order quantity package type ? latest trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and halogen free compliant ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, an d telecom g d s to-220f AOTF12T50P g d s symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r ja r jc * drain current limited by maximum junction tempera ture. 43 0.3 33 0.26 v units 5 2.9 65 3.8 AOTF12T50Pl to-220f green tube 1000 AOTF12T50P AOTF12T50Pl AOTF12T50P AOTF12T50Pl 65 c/w c/w absolute maximum ratings t a =25c unless otherwise noted 30 c units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds single pulsed avalanche energy g power dissipation b mj dv/dt derate above 25 o c p d avalanche current c t c =25c t c =100c continuous drain current repetitive avalanche energy c v 1000 500 50 v/ns parameter drain-source voltage AOTF12T50P to-220f pb free tube i d a 12 48 72 gate-source voltage maximum junction-to-ambient a,d maximum junction-to-case a mosfet dv/dt ruggedness peak diode recovery dv/dt c w mj 480 12* thermal characteristics parameter 300 pulsed drain current c 8* t c =25c rev.2.0: september 2014 www.aosmd.com page 1 of 6 downloaded from: http:///
symbol min typ max units 500 600 bv dss / ?tj 0.47 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 4 5 v r ds(on) 0.39 0.5 ? g fs 10 s v sd 0.74 1 v i s 12 a i sm 48 a c iss 1477 pf c oss 63 pf c o(er) 50 pf c o(tr) 90 pf c rss 6.3 pf r g 2 ? q g 22 32 nc q gs 8 nc v ds =40v, i d =6a v gs =10v, i d =6a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 a output capacitance forward transconductance i s =1a,v gs =0v i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =500v, v gs =0v a v ds =400v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 400v, f=1mhz v ds =0v, v gs =30v gate-body leakage current v gs =10v, v ds =400v, i d =12a total gate charge gate source charge switching parameters gs q gd 5.5 nc t d(on) 37 ns t r 54 ns t d(off) 46 ns t f 28 ns t rr 428 ns q rr 6.1 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =12a,di/dt=100a/ s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =250v, i d =12a, r g =25 i f =12a,di/dt=100a/ s,v ds =100v turn-on rise time turn-on delaytime gate drain charge a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r qja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =4a, v dd =150v, r g =25 ?, starting t j =25 c. h. c o(er) is a fixed capacitance that gives the same stored e nergy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.2.0: september 2014 www.aosmd.com page 2 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 r ds(on) ( ) i d (a) figure 3: on - resistance vs. drain current and gate 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =6a v gs =10v 0 5 10 15 20 25 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6v 6.5v 10v 8v 7v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c figure 3: on - resistance vs. drain current and gate voltage 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c figure 4: on - resistance vs. junction temperature 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temperature rev.2.0: september 2014 www.aosmd.com page 3 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 3 6 9 12 15 0 7 14 21 28 35 v gs (volts) q g (nc) figure 7: gate-charge characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =400v i d =12a 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t ( c) 0 1.5 3 4.5 6 7.5 0 100 200 300 400 500 eoss(uj) e oss t case ( c) figure 10: current de-rating (note f) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for to-220f pb free (note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s v ds (volts) figure 9: coss stored energy 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for to-220f green (note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s rev.2.0: september 2014 www.aosmd.com page 4 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for to-220f pb free (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =2.9 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for to-220f green (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3.8 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.2.0: september 2014 www.aosmd.com page 5 of 6 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev.2.0: september 2014 www.aosmd.com page 6 of 6 downloaded from: http:///
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